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AFGB40T65SQDN
Part number：
AFGB40T65SQDN
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
onsemi
describe：
IGBT 650V 80A TO-263
Encapsulation：
Cut Tape (CT) & Digi-Reel®
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1550
minimum : 1
quantity
unit price
price
1
6.2
6.2
10
4.16
41.6
100
3
300
specifications
  • Part Status
    Active
  • Grade
    Automotive
  • Qualification
    AEC-Q101
  • Mounting Type
    Surface Mount
  • Power - Max
    238 W
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    TO-263 (D2PAK)
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    80 A
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    131 ns
  • Resistor Matching Ratio
    -
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 40A
  • Test Condition
    400V, 40A, 6Ohm, 15V
  • Current - Collector Pulsed (Icm)
    160 A
  • Switching Energy
    858µJ (on), 229µJ (off)
  • Gate Charge
    76 nC
  • Td (on/off) @ 25°C
    17.6ns/75.2ns
  • 1147701964
  • +0086 13632650773

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