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BSM25GB120DN2
Part number：
BSM25GB120DN2
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Infineon Technologies
describe：
IGBT MODULE
Encapsulation：
Bulk
ROHS status：
Yes
currency：
USD
PDF:
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inventory 23
minimum : 10
quantity
unit price
price
10
32.81
328.1
specifications
  • Part Status
    Active
  • Mounting Type
    Chassis Mount
  • Power - Max
    200 W
  • Operating Temperature
    150°C (TJ)
  • Package / Case
    Module
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Input Type
    Standard
  • Configuration
    Half Bridge
  • Current - Collector Cutoff (Max)
    800 µA
  • Resistor Matching Ratio
    -
  • Vce(on) (Max) @ Vge, Ic
    3V @ 15V, 25A
  • Input Capacitance (Cies) @ Vce
    1.65 nF @ 25 V
  • NTC Thermistor
    No
  • Current - Collector Pulsed (Icm)
    38 A
  • 1147701964
  • +0086 13632650773

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