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DF200R12W1H3B27BOMA1
Part number：
DF200R12W1H3B27BOMA1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Infineon Technologies
describe：
IGBT MOD 1200V 30A 375W
Encapsulation：
Tray
ROHS status：
Yes
currency：
USD
PDF:
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inventory 0
minimum : 24
quantity
unit price
price
24
27.36
656.64
specifications
  • Part Status
    Active
  • Mounting Type
    Chassis Mount
  • Power - Max
    375 W
  • Operating Temperature
    -40°C ~ 150°C
  • Package / Case
    Module
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    30 A
  • Input Type
    Standard
  • Configuration
    2 Independent
  • Current - Collector Cutoff (Max)
    1 mA
  • Resistor Matching Ratio
    -
  • Vce(on) (Max) @ Vge, Ic
    1.3V @ 15V, 30A
  • Input Capacitance (Cies) @ Vce
    2 nF @ 25 V
  • NTC Thermistor
    Yes
  • 1147701964
  • +0086 13632650773

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