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F4100R12KS4BOSA1
Part number：
F4100R12KS4BOSA1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Infineon Technologies
describe：
IGBT MOD 1200V 130A 660W
Encapsulation：
Tray
ROHS status：
Yes
currency：
USD
PDF:
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inventory 10
minimum : 1
quantity
unit price
price
1
129.44
129.44
10
112.38
1123.8
specifications
  • Part Status
    Active
  • Mounting Type
    Chassis Mount
  • Power - Max
    660 W
  • Operating Temperature
    -40°C ~ 125°C
  • Package / Case
    Module
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Input Type
    Standard
  • Configuration
    Three Phase Inverter
  • Current - Collector Cutoff (Max)
    5 mA
  • Resistor Matching Ratio
    -
  • Vce(on) (Max) @ Vge, Ic
    3.75V @ 15V, 100A
  • Input Capacitance (Cies) @ Vce
    6.8 nF @ 25 V
  • NTC Thermistor
    Yes
  • Current - Collector Pulsed (Icm)
    130 A
  • 1147701964
  • +0086 13632650773

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