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FF200R12KE3B2HOSA1
Part number：
FF200R12KE3B2HOSA1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Infineon Technologies
describe：
IGBT MOD 1200V 295A 1050W
Encapsulation：
Tray
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 3
minimum : 1
quantity
unit price
price
1
109.75
109.75
10
92.38
923.8
specifications
  • Part Status
    Active
  • Mounting Type
    Chassis Mount
  • Power - Max
    1050 W
  • Operating Temperature
    -40°C ~ 125°C
  • Package / Case
    Module
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    295 A
  • Input Type
    Standard
  • Configuration
    Half Bridge
  • Current - Collector Cutoff (Max)
    5 mA
  • Resistor Matching Ratio
    -
  • Vce(on) (Max) @ Vge, Ic
    2.15V @ 15V, 200A
  • Input Capacitance (Cies) @ Vce
    14 nF @ 25 V
  • NTC Thermistor
    No
  • 1147701964
  • +0086 13632650773

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