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FII30-12E
Part number：
FII30-12E
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Littelfuse / IXYS RF
describe：
IGBT H BRIDGE 1200V 33A I4PAK5
Encapsulation：
ROHS status：
None
currency：
USD
PDF:
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specifications
  • Mounting Type
    Through Hole
  • Power - Max
    150 W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Input
    Standard
  • NTC Thermistor
    No
  • Package / Case
    i4-Pac™-5
  • Supplier Device Package
    ISOPLUS i4-PAC™
  • IGBT Type
    NPT
  • Configuration
    Half Bridge
  • Current - Collector Cutoff (Max)
    200 µA
  • Current - Collector (Ic) (Max)
    33 A
  • Vce(on) (Max) @ Vge, Ic
    2.9V @ 15V, 20A
  • Input Capacitance (Cies) @ Vce
    1.2 nF @ 25 V
  • 1147701964
  • +0086 13632650773

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