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FP100R07N3E4BOSA1
Part number：
FP100R07N3E4BOSA1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Infineon Technologies
describe：
IGBT MOD 650V 100A 335W
Encapsulation：
Tray
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 8
minimum : 1
quantity
unit price
price
1
106.89
106.89
10
89.51
895.1
specifications
  • Part Status
    Active
  • Mounting Type
    Chassis Mount
  • Power - Max
    335 W
  • Operating Temperature
    -40°C ~ 150°C
  • Package / Case
    Module
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Input Type
    Standard
  • Configuration
    Three Phase Inverter
  • Current - Collector Cutoff (Max)
    1 mA
  • IGBT Type
    Trench Field Stop
  • Vce(on) (Max) @ Vge, Ic
    1.95V @ 15V, 100A
  • Input Capacitance (Cies) @ Vce
    6.2 nF @ 25 V
  • NTC Thermistor
    No
  • Current - Collector Pulsed (Icm)
    100 A
  • 1147701964
  • +0086 13632650773

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