collect compare
FP35R12KT4B11BOSA1
Part number：
FP35R12KT4B11BOSA1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Infineon Technologies
describe：
IGBT MOD 1200V 35A 210W
Encapsulation：
Bulk
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 21
minimum : 5
quantity
unit price
price
5
70.39
351.95
specifications
  • Part Status
    Discontinued at
  • Mounting Type
    Chassis Mount
  • Power - Max
    210 W
  • Operating Temperature
    -40°C ~ 150°C
  • Package / Case
    Module
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    35 A
  • Input Type
    Standard
  • Configuration
    Three Phase Inverter
  • Current - Collector Cutoff (Max)
    1 mA
  • IGBT Type
    Trench Field Stop
  • Vce(on) (Max) @ Vge, Ic
    2.15V @ 15V, 35A
  • Input Capacitance (Cies) @ Vce
    2 nF @ 25 V
  • NTC Thermistor
    Yes
  • 1147701964
  • +0086 13632650773

{{ boxName }} ({{ dataList?.length || 0 }} Items)

{{ val.part_number }}

{{ val.manufacturer || val.en_manufacturer || '' }}

quantity: {{ val.quantity }}

submit

it was empty.