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FS50R07N2E4BOSA1
Part number：
FS50R07N2E4BOSA1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Infineon Technologies
describe：
IGBT MODULE 650V 70A 190W
Encapsulation：
Tray
ROHS status：
Yes
currency：
USD
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inventory 280
minimum : 40
quantity
unit price
price
40
15.35
614
specifications
  • Part Status
    Obsolete
  • Mounting Type
    Chassis Mount
  • Power - Max
    190 W
  • Operating Temperature
    -40°C ~ 125°C
  • Package / Case
    Module
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    70 A
  • Input Type
    Standard
  • Configuration
    Full Bridge Inverter
  • Current - Collector Cutoff (Max)
    1 mA
  • Resistor Matching Ratio
    -
  • Vce(on) (Max) @ Vge, Ic
    1.95V @ 15V, 50A
  • Input Capacitance (Cies) @ Vce
    3.1 nF @ 25 V
  • NTC Thermistor
    Yes
  • 1147701964
  • +0086 13632650773

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