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GH50H65DRB2-7AG
Part number：
GH50H65DRB2-7AG
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
STMicroelectronics
describe：
IGBT
Encapsulation：
Bulk
ROHS status：
Yes
currency：
USD
PDF:
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inventory 0
minimum : 1000
quantity
unit price
price
1000
1.48
1480
specifications
  • Part Status
    Active
  • Grade
    Automotive
  • Qualification
    AEC-Q101
  • Mounting Type
    Surface Mount
  • Power - Max
    385 W
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
  • Supplier Device Package
    H2PAK-7
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    912 ns
  • IGBT Type
    Trench Field Stop
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 50A
  • Test Condition
    400V, 50A, 4.7Ohm, 15V
  • Current - Collector Pulsed (Icm)
    200 A
  • Switching Energy
    557µJ (off)
  • Gate Charge
    152 nC
  • Td (on/off) @ 25°C
    -/117ns
  • 1147701964
  • +0086 13632650773

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