collect compare
GT30J65MRB,S1E
Part number：
GT30J65MRB,S1E
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Toshiba Semiconductor and Storage
describe：
IGBT 650V 60A TO-3P
Encapsulation：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 0
minimum : 1
quantity
unit price
price
1
3.82
3.82
25
2.16
54
100
1.76
176
500
1.44
720
1000
1.34
1340
2000
1.33
2660
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Power - Max
    200 W
  • Operating Temperature
    175°C (TJ)
  • Package / Case
    TO-3P-3, SC-65-3
  • Supplier Device Package
    TO-3P(N)
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    60 A
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    200 ns
  • Resistor Matching Ratio
    -
  • Vce(on) (Max) @ Vge, Ic
    1.8V @ 15V, 30A
  • Test Condition
    400V, 15A, 56Ohm, 15V
  • Switching Energy
    1.4mJ (on), 220µJ (off)
  • Gate Charge
    70 nC
  • Td (on/off) @ 25°C
    75ns/400ns
  • 1147701964
  • +0086 13632650773

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