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GT40QR21(STA1,E,D
Part number：
GT40QR21(STA1,E,D
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Toshiba Semiconductor and Storage
describe：
IGBT 1200V 40A TO-3P
Encapsulation：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 65
minimum : 1
quantity
unit price
price
1
5.3
5.3
25
3.07
76.75
100
2.53
253
500
2.11
1055
1000
2.06
2060
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Power - Max
    230 W
  • Operating Temperature
    175°C (TJ)
  • Package / Case
    TO-3P-3, SC-65-3
  • Supplier Device Package
    TO-3P(N)
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    40 A
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    600 ns
  • Resistor Matching Ratio
    -
  • Vce(on) (Max) @ Vge, Ic
    2.7V @ 15V, 40A
  • Test Condition
    280V, 40A, 10Ohm, 20V
  • Switching Energy
    -, 290µJ (off)
  • 1147701964
  • +0086 13632650773

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