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GT50JR21(STA1,E,S)
Part number：
GT50JR21(STA1,E,S)
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Toshiba Semiconductor and Storage
describe：
IGBT 600V 50A TO-3P
Encapsulation：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 24
minimum : 1
quantity
unit price
price
1
6.54
6.54
25
3.84
96
100
3.2
320
500
2.73
1365
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Power - Max
    230 W
  • Operating Temperature
    175°C (TJ)
  • Package / Case
    TO-3P-3, SC-65-3
  • Supplier Device Package
    TO-3P(N)
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    50 A
  • Input Type
    Standard
  • Resistor Matching Ratio
    -
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 50A
  • Current - Collector Pulsed (Icm)
    100 A
  • 1147701964
  • +0086 13632650773

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