collect compare
HGT1S12N60B3DS
Part number：
HGT1S12N60B3DS
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Harris Corporation
describe：
IGBT 600V 27A TO-263AB
Encapsulation：
Bulk
ROHS status：
Yes
currency：
USD
PDF:
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inventory 1100
minimum : 226
quantity
unit price
price
226
1.33
300.58
specifications
  • Part Status
    Active
  • Mounting Type
    Surface Mount
  • Power - Max
    104 W
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    TO-263AB
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Input Type
    Standard
  • Resistor Matching Ratio
    -
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 12A
  • Test Condition
    480V, 12A, 25Ohm, 15V
  • Current - Collector Pulsed (Icm)
    110 A
  • Switching Energy
    304µJ (on), 250µJ (off)
  • Gate Charge
    78 nC
  • Td (on/off) @ 25°C
    26ns/150ns
  • 1147701964
  • +0086 13632650773

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