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IFS100B12N3E4B31BOSA1
Part number：
IFS100B12N3E4B31BOSA1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Infineon Technologies
describe：
IGBT MOD 1200V 200A 515W
Encapsulation：
Tray
ROHS status：
Yes
currency：
USD
PDF:
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inventory 0
minimum : 1
quantity
unit price
price
1
112.34
112.34
10
94.98
949.8
specifications
  • Part Status
    Active
  • Mounting Type
    Chassis Mount
  • Power - Max
    515 W
  • Operating Temperature
    -40°C ~ 150°C
  • Package / Case
    Module
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Input Type
    Standard
  • Configuration
    Full Bridge
  • Current - Collector Cutoff (Max)
    1 mA
  • IGBT Type
    Trench Field Stop
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 100A
  • Input Capacitance (Cies) @ Vce
    6.3 nF @ 25 V
  • NTC Thermistor
    Yes
  • Current - Collector Pulsed (Icm)
    200 A
  • 1147701964
  • +0086 13632650773

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