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IGD03N120S7ATMA1
Part number：
IGD03N120S7ATMA1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Infineon Technologies
describe：
IGBT TRENCH FS 1200V 10A TO252-3
Encapsulation：
Cut Tape (CT) & Digi-Reel®
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 1755
minimum : 1
quantity
unit price
price
1
1.53
1.53
10
0.96
9.6
100
0.64
64
500
0.5
250
1000
0.46
460
specifications
  • Part Status
    Active
  • Mounting Type
    Surface Mount
  • Power - Max
    45 W
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Package / Case
    TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package
    PG-TO252-3
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    9 A
  • Input Type
    Standard
  • Resistor Matching Ratio
    -
  • IGBT Type
    Trench Field Stop
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 3A
  • Test Condition
    600V, 3A, 60Ohm, 15V
  • Switching Energy
    210µJ (on), 160µJ (off)
  • Gate Charge
    24 nC
  • Td (on/off) @ 25°C
    19ns/89ns
  • 1147701964
  • +0086 13632650773

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