collect compare
IGD10N65T6ARMA1
Part number：
IGD10N65T6ARMA1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Infineon Technologies
describe：
IGBT TRENCH FS 650V 23A TO252-3
Encapsulation：
Tape & Reel (TR)
ROHS status：
Yes
currency：
USD
PDF:
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specifications
  • Part Status
    Obsolete
  • Mounting Type
    Surface Mount
  • Power - Max
    75 W
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Package / Case
    TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package
    PG-TO252-3
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    23 A
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 8.5A
  • Test Condition
    400V, 8.5A, 47Ohm, 15V
  • Current - Collector Pulsed (Icm)
    42.5 A
  • Switching Energy
    200µJ (on), 70µJ (off)
  • Gate Charge
    27 nC
  • Td (on/off) @ 25°C
    30ns/106ns
  • 1147701964
  • +0086 13632650773

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