collect compare
IGW50N65F5FKSA1
Part number：
IGW50N65F5FKSA1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Infineon Technologies
describe：
IGBT 650V 80A TO247-3
Encapsulation：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 215
minimum : 1
quantity
unit price
price
1
4.53
4.53
30
2.51
75.3
120
2.07
248.4
510
1.74
887.4
1020
1.62
1652.4
2010
1.6
3216
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Power - Max
    305 W
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    PG-TO247-3
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    80 A
  • Input Type
    Standard
  • Resistor Matching Ratio
    -
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 50A
  • Test Condition
    400V, 25A, 12Ohm, 15V
  • Current - Collector Pulsed (Icm)
    150 A
  • Switching Energy
    490µJ (on), 160µJ (off)
  • Gate Charge
    120 nC
  • Td (on/off) @ 25°C
    21ns/175ns
  • 1147701964
  • +0086 13632650773

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