collect compare
IGW75N65H5XKSA1
Part number：
IGW75N65H5XKSA1
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Infineon Technologies
describe：
IGBT TRENCH 650V 120A TO247-3
Encapsulation：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 97
minimum : 1
quantity
unit price
price
1
4.87
4.87
30
2.72
81.6
120
2.24
268.8
510
1.89
963.9
1020
1.77
1805.4
2010
1.77
3557.7
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Power - Max
    395 W
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    PG-TO247-3
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Input Type
    Standard
  • IGBT Type
    Trench
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 75A
  • Test Condition
    400V, 75A, 8Ohm, 15V
  • Current - Collector Pulsed (Icm)
    120 A
  • Switching Energy
    2.25mJ (on), 950µJ (off)
  • Gate Charge
    160 nC
  • Td (on/off) @ 25°C
    28ns/174ns
  • 1147701964
  • +0086 13632650773

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