collect compare
IXYP20N65C3D1M
Part number：
IXYP20N65C3D1M
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
IXYS
describe：
IGBT PT 650V 18A TO-220-3
Encapsulation：
Tube
ROHS status：
Yes
currency：
USD
PDF:
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inventory 0
minimum : 300
quantity
unit price
price
300
1.8
540
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Power - Max
    50 W
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-220-3
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    105 A
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    30 ns
  • IGBT Type
    PT
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 20A
  • Test Condition
    400V, 20A, 20Ohm, 15V
  • Current - Collector Pulsed (Icm)
    18 A
  • Switching Energy
    430µJ (on), 350µJ (off)
  • Gate Charge
    30 nC
  • Td (on/off) @ 25°C
    19ns/80ns
  • 1147701964
  • +0086 13632650773

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