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MIB30N65AT1Y-TP
Part number:
MIB30N65AT1Y-TP
describe:
IGBT DISCRETE,D2-PAK
Encapsulation:
Tape & Reel (TR)
ROHS status:
Yes
currency:
USD
PDF:
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inventory 0
minimum : 800
quantity
unit price
price
800
0.8
640
1600
0.74
1184
2400
0.71
1704
4000
0.68
2720
specifications
  • Part Status
    Active
  • Mounting Type
    Surface Mount
  • Power - Max
    136 W
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Package / Case
    TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package
    D2PAK
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    40 A
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    114 ns
  • Resistor Matching Ratio
    -
  • IGBT Type
    Trench Field Stop
  • Vce(on) (Max) @ Vge, Ic
    1.95V @ 15V, 30A
  • Test Condition
    400V, 30A, 20Ohm, 15V
  • Switching Energy
    1.37mJ (on), 0.63mJ (off)
  • Gate Charge
    160 nC
  • Td (on/off) @ 25°C
    58ns/93ns