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MIEB101W1200EH
Part number：
MIEB101W1200EH
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
IXYS
describe：
IGBT MODULE 1200V 183A 630W E3
Encapsulation：
Box
ROHS status：
Yes
currency：
USD
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inventory 0
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specifications
  • Part Status
    Obsolete
  • Mounting Type
    Chassis Mount
  • Power - Max
    630 W
  • Operating Temperature
    -40°C ~ 125°C (TJ)
  • Package / Case
    E3
  • Voltage - Collector Emitter Breakdown (Max)
    1200 V
  • Current - Collector (Ic) (Max)
    183 A
  • Input Type
    Standard
  • Configuration
    Three Phase Inverter
  • Current - Collector Cutoff (Max)
    300 µA
  • Resistor Matching Ratio
    -
  • Vce(on) (Max) @ Vge, Ic
    2.2V @ 15V, 100A
  • Input Capacitance (Cies) @ Vce
    7.43 nF @ 25 V
  • NTC Thermistor
    No
  • 1147701964
  • +0086 13632650773

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