collect compare
MIW50N65AT0Y-BP
Part number:
MIW50N65AT0Y-BP
describe:
IGBT DISCRETE,TO-247AB
Encapsulation:
Tube
ROHS status:
Yes
currency:
USD
PDF:
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inventory 0
minimum : 1800
quantity
unit price
price
1800
1.98
3564
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Power - Max
    214 W
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AB
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    70 A
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    148 ns
  • Resistor Matching Ratio
    -
  • IGBT Type
    Trench Field Stop
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 50A
  • Test Condition
    300V, 50A, 20Ohm, 15V
  • Current - Collector Pulsed (Icm)
    200 A
  • Switching Energy
    1.57mJ (on), 580µJ (off)
  • Gate Charge
    250 nC
  • Td (on/off) @ 25°C
    20ns/131ns