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MIW50N65AT1Y-BP
Part number:
MIW50N65AT1Y-BP
describe:
IC
Encapsulation:
Tube
ROHS status:
Yes
currency:
USD
PDF:
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inventory 0
minimum : 1800
quantity
unit price
price
1800
1.16
2088
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Power - Max
    306 W
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247AB
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    80 A
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    148 ns
  • Resistor Matching Ratio
    -
  • IGBT Type
    Trench Field Stop
  • Vce(on) (Max) @ Vge, Ic
    1.8V @ 15V, 50A
  • Test Condition
    400V, 50A, 10Ohm, 15V
  • Current - Collector Pulsed (Icm)
    150 A
  • Switching Energy
    3.18mJ (on), 1.25mJ (off)
  • Gate Charge
    150 nC
  • Td (on/off) @ 25°C
    20ns/103ns