collect compare
RGT50NS65DGC9
Part number：
RGT50NS65DGC9
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
ROHM Semiconductor
describe：
IGBT TRENCH FS 650V 48A TO-262
Encapsulation：
Tube
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 900
minimum : 1
quantity
unit price
price
1
4.86
4.86
50
2.52
126
100
2.29
229
500
1.89
945
1000
1.77
1770
2000
1.76
3520
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Power - Max
    194 W
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Package / Case
    TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package
    TO-262
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    75 A
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    58 ns
  • Resistor Matching Ratio
    -
  • IGBT Type
    Trench Field Stop
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 25A
  • Test Condition
    400V, 25A, 10Ohm, 15V
  • Gate Charge
    49 nC
  • Td (on/off) @ 25°C
    27ns/88ns
  • 1147701964
  • +0086 13632650773

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