collect compare
RGT8NS65DGC9
Part number：
RGT8NS65DGC9
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
ROHM Semiconductor
describe：
IGBT TRENCH FS 650V 8A TO-262
Encapsulation：
Tube
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 962
minimum : 1
quantity
unit price
price
1
1.55
1.55
50
0.73
36.5
100
0.65
65
500
0.51
255
1000
0.47
470
2000
0.43
860
5000
0.39
1950
10000
0.37
3700
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Power - Max
    65 W
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Package / Case
    TO-262-3 Long Leads, I2PAK, TO-262AA
  • Supplier Device Package
    TO-262
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    12 A
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    40 ns
  • Resistor Matching Ratio
    -
  • IGBT Type
    Trench Field Stop
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 4A
  • Test Condition
    400V, 4A, 50Ohm, 15V
  • Current - Collector Pulsed (Icm)
    8 A
  • Gate Charge
    13.5 nC
  • Td (on/off) @ 25°C
    17ns/69ns
  • 1147701964
  • +0086 13632650773

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