collect compare
RGTVX2TS65DGC11
Part number：
RGTVX2TS65DGC11
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
ROHM Semiconductor
describe：
IGBT TRENCH FS 650V 111A TO-247N
Encapsulation：
Tube
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 530
minimum : 1
quantity
unit price
price
1
8.97
8.97
30
5.26
157.8
120
4.45
534
510
3.99
2034.9
specifications
  • Part Status
    Not For New Designs
  • Mounting Type
    Through Hole
  • Power - Max
    319 W
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247N
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    111 A
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 60A
  • Test Condition
    400V, 60A, 10Ohm, 15V
  • Current - Collector Pulsed (Icm)
    240 A
  • Switching Energy
    2.08mJ (on), 1.15mJ (off)
  • Gate Charge
    123 nC
  • Td (on/off) @ 25°C
    49ns/150ns
  • 1147701964
  • +0086 13632650773

{{ boxName }} ({{ dataList?.length || 0 }} Items)

{{ val.part_number }}

{{ val.manufacturer || val.en_manufacturer || '' }}

quantity: {{ val.quantity }}

submit

it was empty.