collect compare
RGW50TS65DGC11
Part number：
RGW50TS65DGC11
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
ROHM Semiconductor
describe：
IGBT TRENCH FS 650V 50A TO-247N
Encapsulation：
Tube
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 480
minimum : 1
quantity
unit price
price
1
3.32
3.32
30
1.8
54
120
1.46
175.2
510
1.22
622.2
1020
1.13
1152.6
2010
1.05
2110.5
5010
1.05
5260.5
specifications
  • Part Status
    Not For New Designs
  • Mounting Type
    Through Hole
  • Power - Max
    156 W
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247N
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    50 A
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 25A
  • Test Condition
    400V, 25A, 10Ohm, 15V
  • Current - Collector Pulsed (Icm)
    100 A
  • Switching Energy
    390µJ (on), 430µJ (off)
  • Gate Charge
    73 nC
  • Td (on/off) @ 25°C
    35ns/102ns
  • 1147701964
  • +0086 13632650773

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