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RJP65T54DPM-E0#T2
Part number：
RJP65T54DPM-E0#T2
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Renesas Electronics Corporation
describe：
IGBT TRENCH 650V 60A TO-3PF
Encapsulation：
Tube
ROHS status：
Yes
currency：
USD
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specifications
  • Part Status
    Obsolete
  • Mounting Type
    Through Hole
  • Power - Max
    63.5 W
  • Operating Temperature
    175°C (TJ)
  • Package / Case
    TO-3PFM, SC-93-3
  • Supplier Device Package
    TO-3PF
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Current - Collector (Ic) (Max)
    60 A
  • Input Type
    Standard
  • IGBT Type
    Trench
  • Vce(on) (Max) @ Vge, Ic
    1.68V @ 15V, 30A
  • Test Condition
    400V, 30A, 10Ohm, 15V
  • Current - Collector Pulsed (Icm)
    225 A
  • Switching Energy
    330µJ (on), 760µJ (off)
  • Gate Charge
    72 nC
  • Td (on/off) @ 25°C
    35ns/120ns
  • 1147701964
  • +0086 13632650773

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