collect compare
STGWT80H65DFB
Part number：
STGWT80H65DFB
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
STMicroelectronics
describe：
IGBT TRENCH FS 650V 120A TO-3P
Encapsulation：
Tube
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 240
minimum : 1
quantity
unit price
price
1
7.06
7.06
30
4.06
121.8
120
3.4
408
510
2.91
1484.1
1020
2.9
2958
specifications
  • Part Status
    Active
  • Mounting Type
    Through Hole
  • Power - Max
    469 W
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    TO-3P-3, SC-65-3
  • Supplier Device Package
    TO-3P
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Input Type
    Standard
  • Reverse Recovery Time (trr)
    85 ns
  • IGBT Type
    Trench Field Stop
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 80A
  • Test Condition
    400V, 80A, 10Ohm, 15V
  • Current - Collector Pulsed (Icm)
    120 A
  • Switching Energy
    2.1mJ (on), 1.5mJ (off)
  • Gate Charge
    414 nC
  • Td (on/off) @ 25°C
    84ns/280ns
  • 1147701964
  • +0086 13632650773

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