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VS-GT200TS065N
Part number：
VS-GT200TS065N
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Vishay General Semiconductor - Diodes Division
describe：
MODULES IGBT - IAP IGBT
Encapsulation：
Box
ROHS status：
Yes
currency：
USD
PDF:
BUY NOW add to cart
inventory 6
minimum : 1
quantity
unit price
price
1
87.54
87.54
15
70.47
1057.05
specifications
  • Part Status
    Active
  • Mounting Type
    Chassis Mount
  • Power - Max
    517 W
  • Operating Temperature
    -40°C ~ 175°C (TJ)
  • Package / Case
    Module
  • Supplier Device Package
    INT-A-PAK IGBT
  • Voltage - Collector Emitter Breakdown (Max)
    650 V
  • Input Type
    Standard
  • Configuration
    Half Bridge Inverter
  • Current - Collector Cutoff (Max)
    100 µA
  • IGBT Type
    Trench
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 200A
  • NTC Thermistor
    No
  • Current - Collector Pulsed (Icm)
    193 A
  • 1147701964
  • +0086 13632650773

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