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VS-GT50TP60N
Part number：
VS-GT50TP60N
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Vishay General Semiconductor - Diodes Division
describe：
IGBT MOD 600V 85A 208W INT-A-PAK
Encapsulation：
Bulk
ROHS status：
Yes
currency：
USD
PDF:
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specifications
  • Part Status
    Obsolete
  • Mounting Type
    Chassis Mount
  • Power - Max
    208 W
  • Operating Temperature
    175°C (TJ)
  • Package / Case
    INT-A-PAK (3 + 4)
  • Supplier Device Package
    INT-A-PAK
  • Voltage - Collector Emitter Breakdown (Max)
    600 V
  • Current - Collector (Ic) (Max)
    85 A
  • Input Type
    Standard
  • Configuration
    Half Bridge
  • Current - Collector Cutoff (Max)
    1 mA
  • IGBT Type
    Trench
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 50A
  • Input Capacitance (Cies) @ Vce
    3.03 nF @ 30 V
  • NTC Thermistor
    No
  • 1147701964
  • +0086 13632650773

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