IRFD210 单 FET、MOSFET_山琅电子_集成电路ic_电阻器_电容器_电位计

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验证码

类型	描述
制造商	Vishay / Siliconix
系列	-
包裹	管子
产品状态	OBSOLETE
包装/箱	4-DIP (0.300", 7.62mm)
安装类型	Through Hole
工作温度	-55°C ~ 150°C (TJ)
技术	MOSFET (Metal Oxide)
场效应管类型	N-Channel
电流 - 连续漏极 (Id) @ 25°C	600mA (Ta)
Rds On（最大）@Id、Vgs	1.5Ohm @ 360mA, 10V
功耗（最大）	1W (Ta)
Vgs(th)（最大值）@Id	4V @ 250µA
供应商设备包	4-HVMDIP
驱动电压（最大导通电阻、最小导通电阻）	10V
Vgs（最大）	±20V
漏源电压 (Vdss)	200 V
栅极电荷 (Qg)（最大值）@Vgs	8.2 nC @ 10 V
输入电容 (Ciss)（最大值）@Vds	140 pF @ 25 V

类型

描述

制造商

Vishay / Siliconix

系列

包裹

管子

产品状态

OBSOLETE

包装/箱

4-DIP (0.300", 7.62mm)

安装类型

Through Hole

工作温度

-55°C ~ 150°C (TJ)

技术

MOSFET (Metal Oxide)

场效应管类型

N-Channel

电流 - 连续漏极 (Id) @ 25°C

600mA (Ta)

Rds On（最大）@Id、Vgs

1.5Ohm @ 360mA, 10V

功耗（最大）

1W (Ta)

Vgs(th)（最大值）@Id

4V @ 250µA

供应商设备包

4-HVMDIP

驱动电压（最大导通电阻、最小导通电阻）

10V

Vgs（最大）

±20V

漏源电压 (Vdss)

200 V

栅极电荷 (Qg)（最大值）@Vgs

8.2 nC @ 10 V

输入电容 (Ciss)（最大值）@Vds

140 pF @ 25 V