TP65H070LSG 单 FET、MOSFET_山琅电子_集成电路ic_电阻器_电容器_电位计

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Niue

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Oman

Panama

Peru

French Polynesia

Papua New Guinea

Philippines

Pakistan

St Helena, Ascension, Tristan da Cunha

Slovenia

Svalbard & Jan Mayen

Slovakia

Sierra Leone

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Senegal

Somalia

Suriname

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São Tomé & Príncipe

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Sint Maarten

Syria

Eswatini

Turks & Caicos Islands

Chad

Togo

Tanzania

Ukraine

Uganda

U.S. Outlying Islands

Andorra

数量

验证码

类型	描述
制造商	Transphorm
系列	TP65H070L
包装	管子
产品状态	DISCONTINUED
包装/箱	3-PowerDFN
安装类型	Surface Mount
工作温度	-55°C ~ 150°C (TJ)
技术	GaNFET (Cascode Gallium Nitride FET)
场效应管类型	N-Channel
电流 - 连续漏极 (Id) @ 25°C	25A (Tc)
Rds On（最大）@Id、Vgs	85mOhm @ 16A, 10V
功耗（最大）	96W (Tc)
Vgs(th)（最大值）@Id	4.8V @ 700µA
供应商设备包	3-PQFN (8x8)
驱动电压（最大导通电阻、最小导通电阻）	10V
Vgs（最大）	±20V
漏源电压 (Vdss)	650 V
栅极电荷 (Qg)（最大值）@Vgs	9.3 nC @ 10 V
输入电容 (Ciss)（最大值）@Vds	600 pF @ 400 V

类型

描述

制造商

Transphorm

系列

TP65H070L

包装

管子

产品状态

DISCONTINUED

包装/箱

3-PowerDFN

安装类型

Surface Mount

工作温度

-55°C ~ 150°C (TJ)

技术

GaNFET (Cascode Gallium Nitride FET)

场效应管类型

N-Channel

电流 - 连续漏极 (Id) @ 25°C

25A (Tc)

Rds On（最大）@Id、Vgs

85mOhm @ 16A, 10V

功耗（最大）

96W (Tc)

Vgs(th)（最大值）@Id

4.8V @ 700µA

供应商设备包

3-PQFN (8x8)

驱动电压（最大导通电阻、最小导通电阻）

10V

Vgs（最大）

±20V

漏源电压 (Vdss)

650 V

栅极电荷 (Qg)（最大值）@Vgs

9.3 nC @ 10 V

输入电容 (Ciss)（最大值）@Vds

600 pF @ 400 V