TPC8228-H,LQ FET、MOSFET 阵列_山琅电子_集成电路ic_电阻器_电容器_电位计

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验证码

类型	描述
制造商	Toshiba Electronic Devices and Storage Corporation
系列	U-MOSVI-H
包装	卷带式 (TR)
产品状态	ACTIVE
包装/箱	8-SOIC (0.154", 3.90mm Width)
安装类型	Surface Mount
配置	2 N-Channel (Dual)
工作温度	150°C
技术	MOSFET (Metal Oxide)
功率 - 最大	1.5W (Ta)
漏源电压 (Vdss)	60V
电流 - 连续漏极 (Id) @ 25°C	3.8A
输入电容 (Ciss)（最大值）@Vds	640pF @ 10V
Rds On（最大）@Id、Vgs	57mOhm @ 1.9A, 10V
栅极电荷 (Qg)（最大值）@Vgs	11nC @ 10V
Vgs(th)（最大值）@Id	2.3V @ 100µA
供应商设备包	8-SOP

类型

描述

制造商

Toshiba Electronic Devices and Storage Corporation

系列

U-MOSVI-H

包装

卷带式 (TR)

产品状态

ACTIVE

包装/箱

8-SOIC (0.154", 3.90mm Width)

安装类型

Surface Mount

配置

2 N-Channel (Dual)

工作温度

150°C

技术

MOSFET (Metal Oxide)

功率 - 最大

1.5W (Ta)

漏源电压 (Vdss)

60V

电流 - 连续漏极 (Id) @ 25°C

3.8A

输入电容 (Ciss)（最大值）@Vds

640pF @ 10V

Rds On（最大）@Id、Vgs

57mOhm @ 1.9A, 10V

栅极电荷 (Qg)（最大值）@Vgs

11nC @ 10V

Vgs(th)（最大值）@Id

2.3V @ 100µA

供应商设备包

8-SOP